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APT53F80J
800V, 57A, 0.11 Max, trr 470ns
N-Channel FREDFET
Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
S G D
S
SO
2 T-
27
"UL Recognized"
ISOTOP (R)
file # E145592
APT53F80J Single die FREDFET
G
D
S
FEATURES
* Fast switching with low EMI * Low trr for high reliability * Ultra low Crss for improved noise immunity * Low gate charge * Avalanche energy rated * RoHS compliant
TYPICAL APPLICATIONS
* ZVS phase shifted and other full bridge * Half bridge * PFC and other boost converter * Buck converter * Single and two switch forward * Flyback
Absolute Maximum Ratings
Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive
1
Ratings 57 36 325 30 3725 43
Unit
A
V mJ A
Thermal and Mechanical Characteristics
Symbol PD RJC RCS TJ,TSTG VIsolation WT Characteristic Total Power Dissipation @ TC = 25C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) Package Weight 29.2 Torque 10 Terminals and Mounting Screws. 1.1 MicrosemiWebsite-http://www.microsemi.com -55 2500 1.03 0.15 150 C V oz g in*lbf N*m
04-2009 050-8157 Rev C
Min
Typ
Max 960 0.13
Unit W C/W
Static Characteristics
Symbol
VBR(DSS) VBR(DSS)/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS
TJ = 25C unless otherwise specified
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 250A VGS = 10V, ID = 43A VGS = VDS, ID = 5mA VDS = 800V VGS = 0V TJ = 25C TJ = 125C
APT53F80J
Typ 0.87 0.07 4 -10 Max Unit V V/C V mV/C A nA
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance
3
Min 800
Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current
2.5
0.11 5 250 1000 100
VGS = 30V
Dynamic Characteristics
Symbol
gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf
4
TJ = 25C unless otherwise specified
Test Conditions
VDS = 50V, ID = 43A VGS = 0V, VDS = 25V f = 1MHz
Parameter
Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related
Min
Typ 80 17550 300 1745 825
Max
Unit S
pF
VGS = 0V, VDS = 0V to 533V
5
Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time
VGS = 0 to 10V, ID = 43A, VDS = 400V Resistive Switching VDD = 533V, ID = 43A RG = 2.2 6 , VGG = 15V
410 570 95 290 100 145 435 125
nC
ns
Source-Drain Diode Characteristics
Symbol
IS ISM VSD trr Qrr Irrm dv/dt
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt
Test Conditions
MOSFET symbol showing the integral reverse p-n junction diode (body diode)
Min
D
Typ
Max 57
Unit
G S
A 325 1.0 470 960 V ns C A 20 V/ns
ISD = 43A, TJ = 25C, VGS = 0V TJ = 25C TJ = 125C ISD = 43A 3 diSD/dt = 100A/s VDD = 100V TJ = 25C TJ = 125C TJ = 25C TJ = 125C ISD 43A, di/dt 1000A/s, VDD = 400V, TJ = 125C
405 800 2.95 8.86 14 21
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25C, L = 4.03mH, RG = 25, IAS = 43A. 3 Pulse test: Pulse Width < 380s, duty cycle < 2%.
04-2009 Rev C
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = 5.57E-8/VDS^2 + 7.15E-8/VDS + 2.75E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
050-8157
APT53F80J
200
V
GS
100
= 10V T = 125C
J
180 160 ID, DRAIN CURRENT (A) 140 120 100 80 60 40 20 0
TJ = 125C TJ = 150C TJ = 25C TJ = -55C
V
GS
= 6V, 6.5V, 10 & 15V
80 ID, DRIAN CURRENT (A)
5.5V
60
40
5V
20
4.5V 4V
0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) Figure 1, Output Characteristics
0
0
5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
3.0
NORMALIZED TO VGS = 10V @ 43A
350
VDS> ID(ON) x RDS(ON) MAX.
2.5 ID, DRAIN CURRENT (A)
300 250 200 150
250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
2.0
1.5
TJ = -55C
1.0
TJ = 25C
100
TJ = 125C
0.5 0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 3, RDS(ON) vs Junction Temperature 100 90
TJ = -55C
50 0
0
1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics
30,000 10,000 C, CAPACITANCE (pF) Ciss
gfs, TRANSCONDUCTANCE
80
TJ = 25C
70 60 50 40 30 20 10 0 0 10 20 30 40 50 60 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 70
TJ = 125C
1,000 Coss
100
Crss
10
200 400 600 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage
0
16 VGS, GATE-TO-SOURCE VOLTAGE (V) 14 12
ID = 43A
350 ISD, REVERSE DRAIN CURRENT (A) 300 250 200
TJ = 25C
VDS = 160V
10
VDS = 400V
8 6
VDS = 640V
150 100 50 0 04-2009 050-8157 Rev C
TJ = 150C
4 2 100 200 300 400 500 600 700 800 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 0 0
0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
0
APT53F80J
400
IDM
400
IDM Rds(on)
100 ID, DRAIN CURRENT (A)
100 ID, DRAIN CURRENT (A)
10
13s 100s 1ms Rds(on) 10ms 100ms TJ = 125C TC = 75C DC line
10
13s 100s 1ms 10ms 100ms DC line
1
1
TJ = 150C TC = 25C
Scaling for Different Case & Junction Temperatures: ID = ID(T = 25C)*(TJ - TC)/125
0.1
1
10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area
0.1
C
10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area
1
0.14 0.12 0.10 0.08 0.5 0.06 0.04 0.02 0 0.3
Note:
ZJC, THERMAL IMPEDANCE (C/W)
D = 0.9
0.7
PDM
t1 t2
t1 = Pulse Duration
0.1 0.05 10-5 10-4 SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
1.0
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
* Source
Drain
* Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal.
04-2009
* Source Dimensions in Millimeters and (Inches)
Gate
050-8157
Rev C
ISOTOP(R) is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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